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Background
Integrated Complex Equipment
Background Equipment

Characteristics

  • Integrated cabinet system for stable delivery of liquid metal-organic precursors to process chambers
  • Constant temperature pipeline heating design to prevent precursor condensation and pipeline blockage
  • Dual dilution flow control architecture (single / push-flow double dilution) for precise vapor concentration regulation
  • Full closed-loop safety monitoring framework for hazardous liquid chemical transport

Main Features

Feature 1

Uninterrupted continuous liquid supply to avoid production pause

Feature 1

Real-time liquid leakage detection with automatic emergency cut-off interlock

Feature 1

Accurate vapor saturation pressure control via temperature and carrier gas adjustment

Feature 1

Modular mass flow control unit supports two dilution modes for flexible process matching

Feature 1

Fully sealed high-purity gas path to maintain consistent MO source vapor delivery

Applications

Application Background
Third-generation semiconductor manufacturing
LED & Micro-epitaxy production factories
Advanced display and optoelectronic material workshops
Silicon-based semiconductor chip fabs

Suitable Occasions

Nitrogen

MOCVD, ALCVD, CVD and diffusion epitaxy processes

Nitrogen

Epitaxial growth requiring precise MO source vapor dosage

Nitrogen

Quantum well, pre-deposition and high-intensity reaction processes

Nitrogen

Mass production lines for GaN, Si-based semiconductor thin films

Suitable for Fluids

Application Background
Metal-organic liquid precursors: TMAL, TMGa, DEZn
High-purity liquid silicon sources such as TEOS
Other volatile liquid organometallic process chemicals for epitaxy

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