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Background
Integrated Complex Equipment
Background Equipment

Characteristics

  • Modular integrated gas delivery unit installed between gas source and semiconductor process chamber
  • Fully enclosed airtight cabinet with dedicated exhaust ports for hazardous gas safety control
  • Compact miniaturized structure with high corrosion resistance and ultra-precise flow & pressure control
  • Customizable internal pipeline layout built with high-purity, leak-tight process components
  • Equipped with automatic gas switching and full purge cycle functions for risk isolation

Main Features

Feature 1

Precise transmission, distribution and proportional mixing of multiple specialty process gases

Feature 1

Complete safety interlock design to contain leakage of flammable, toxic and corrosive media

Feature 1

Integrated core components: manual/pneumatic shut-off valves, check valves, MFCs, pressure regulators & high-purity filters

Feature 1

Stable closed-loop control of gas flow, pressure, concentration and mixing ratio

Feature 1

Automatic purge and cut-off logic to eliminate cross-contamination and operational hazards

Feature 1

High cleanliness internal flow path to maintain ultra-high gas purity for thin-film processes

Applications

Application Background
Semiconductor wafer front-end manufacturing
Optical fiber & flat panel display fabrication
Advanced microelectronics and compound semiconductor production
Photovoltaic thin-film cell manufacturing

Suitable Occasions

Nitrogen

Etching, thin-film deposition, ion implantation and epitaxy processes

Nitrogen

High-risk process stations with flammable, toxic or corrosive specialty gas supply

Nitrogen

Fab production lines requiring strict gas leakage prevention and automatic safety protection

Nitrogen

Precision process equipment demanding consistent, controllable mixed gas delivery

Suitable for Fluids

Application Background
Pyrophoric, flammable process gases (silane, disilane, hydrogen, ammonia, methane etc.)
Toxic & highly corrosive electronic specialty gases (chlorine, boron trichloride, nitrogen trifluoride, silicon tetrachloride etc.)
Mixed multi-component precursor gases for thin-film deposition reactions

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