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Background
Integrated Complex Equipment
Background Equipment

Characteristics

  • Precise process control: Uses hydrogen carrier gas to bubble TCS liquid at constant temperature, generating process gas with controllable flow rates.
  • PLC-based system: Controlled by Omron/Siemens PLC with a 10-inch color touchscreen HMI for intuitive operation.
  • Safety & monitoring: Supports interlock connection with production tools, real-time equipment status display, and user permission management.
  • Flexible bubbler options: Available in 4L and 14L volumes, with operating pressure up to 4 bar (design pressure 10 bar).
  • Utilities compatibility: Requires 7 barg pneumatic supply, exhaust (150 m³/hr), and UPS power (110/240VAC, 1kVA); optional cooling water support.

Main Features

Feature 1

Generates controlled-flow process gas for epitaxy tools using hydrogen as carrier gas.

Feature 1

Constant-temperature bubbler design for uniform TCS vaporization.

Feature 1

Real-time monitoring of valve status and system pressure via touchscreen.

Feature 1

Supports optional Ethernet communication for data exchange with host systems.

Feature 1

Customizable user permission levels for secure operation.

Applications

Application Background
Semiconductor manufacturing, specifically epitaxy processes.
Industries using Trichlorosilane (TCS) in silicon epitaxy deposition.

Suitable Occasions

Nitrogen

Epitaxy tool processes requiring controlled, stable delivery of TCS-based process gas.

Nitrogen

Semiconductor fabs with automated, interlocked production systems.

Suitable for Fluids

Application Background
Process liquid: TCS (Trichlorosilane)
Carrier gas: Hydrogen (H₂)

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